Symetrix, Oki work on persistent NDRO FeRAM

By Yoshiko Hara
iApplianceWeb
(02/25/03, 01:52:24 AM EDT)

TOKYO - Symetrix Corp. (Colorado Springs, Co.) has licensed its Non-Destructive Read Out (NDRO) ferroelectric RAM technology to Oki Electric Industry Co., Ltd., who will also serve as foundry for the NDRO FeRAM using its 0.25-micron process.

Symetrix developed it FeRAM technology using Y-1 (layered perovskites) material in mid-1990s. The material works even after 10 trillion erase/write operations, according to Symetrix. "But when using it for a program memory, reading out endurance was still insufficient. The NDRO memory has limitless read-out times thanks to non-destructive read out operation, and it can be used for wider applications," an Oki spokesman said.

The NDRO FeRAM is based on Symetrix' new cell technology called Trinion Cell. Symetrix would not disclose details.

Symetrix and Oki also will collaborate in developing 16-Mbit devices. The U.S. company will handle designs while Oki develops a process to fabricate engineering samples. Samples will be available in the forth quarter of 2003.

The 16-Mbit memory will feature 1.8V operation, less than 20 ns cycle time and SRAM comparable speed, according to Symetrix.

"Practical products may have a smaller capacity than 16 Mbits, depending on applications," Oki said.

Oki will produce the FeRAM mainly as embedded FeRAM LSIs. Oki said it would serve as a FeRAM foundry for both Symetrix and its licensees. Symetirx intends to sell the memory as embedded as well as stand-alone memories.

Oki previously licensed conventional, destructive read out- type FeRAM technology from Symetrix in 2001. It has completed development of embedded FeRAM LSIs and is now promoting the device to customers.

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